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| MDD 172 High Power Diode Modules IFRMS = 2x 300 A IFAVM = 2x 190 A VRRM = 800-1800 V 2 1 3 VRSM VV 900 1300 1500 1700 1900 VRRM Type 3 1 2 800 1200 1400 1600 1800 MDD 172-08N1 MDD 172-12N1 MDD 172-14N1 MDD 172-16N1 MDD 172-18N1 Symbol IFRMS IFAVM IFSM Test Conditions TVJ = TVJM TC = 100C; 180 sine TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 TVJ = 45C VR = 0 TVJ = TVJM VR = 0 t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms (50 Hz), sine (60 Hz), sine (50 Hz), sine (60 Hz), sine (50 Hz), sine (60 Hz), sine (50 Hz), sine (60 Hz), sine Maximum Ratings 300 A 190 A 6600 7290 5600 6200 218 000 221 000 157 000 160 000 -40...+150 150 -40...+125 A A A A A2s A2s A2s A2s C C C V~ V~ Features International standard package Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 72873 q q q q q oi2dt TVJ TVJM Tstg VISOL Md Weight Symbol IR VF VT0 rT QS IRM RthJC RthJK dS dA a 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s Applications Supplies for DC power equipment DC supply for PWM inverter Field supply for DC motors Battery DC power supplies q q q q q q q 3000 3600 Mounting torque (M6) Terminal connection torque (M6) Typical including screws Test Conditions TVJ = TVJM; VR = VRRM IF = 300 A; TVJ = 25C For power-loss calculations only TVJ = TVJM TVJ = 125C; IF = 300 A, -di/dt = 50 A/ms per diode; DC current per module per diode; DC current per module 2.25-2.75/20-25 Nm/lb.in. 4.5-5.5/40-48 Nm/lb.in. 120 g Characteristic Values 20 mA 1.15 0.8 0.8 550 235 0.21 0.105 0.31 0.155 12.7 9.6 50 V V mW mC A K/W K/W K/W K/W mm mm m/s2 q Advantages Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits Dimensions in mm (1 mm = 0.0394") other values see Fig. 6/7 Creepage distance on surface Strike distance through air Maximum allowable acceleration Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions (c) 2000 IXYS All rights reserved 1-3 MDD 172 Fig. 1 Surge overload current IFSM: Crest value, t: duration Fig. 2 oi2dt versus time (1-10 ms) Fig. 2a Maximum forward current at case temperature Fig. 3 Power dissipation versus forward current and ambient temperature (per diode) Fig. 4 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature R = resistive load L = inductive load (c) 2000 IXYS All rights reserved 2-3 MDD 172 Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Fig. 6 Transient thermal impedance junction to case (per diode) RthJC for various conduction angles d: d DC 180 120 60 30 RthJC (K/W) 0.210 0.223 0.233 0.260 0.295 Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 0.0087 0.0163 0.185 ti (s) 0.001 0.065 0.4 Fig. 7 Transient thermal impedance junction to heatsink (per diode) RthJK for various conduction angles d: d DC 180 120 60 30 RthJK (K/W) 0.31 0.323 0.333 0.360 0.395 Constants for ZthJK calculation: i 1 2 3 4 Rthi (K/W) 0.0087 0.0163 0.185 0.1 ti (s) 0.001 0.065 0.4 1.29 (c) 2000 IXYS All rights reserved 3-3 |
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